1TB Samsung SSD M.2 PCI-e 970 EVO Plus MZ-V7S1T0BW
- 1000GB M.2 PCI-e (NVMe) SSD
- Samsung 3D V-Nand Technology
- Read performance up to 3500 MB/s
- Write performance up to 3300 MB/s
Product Description MZ-V7S1T0BW
Always Evolving SSD
The ultimate in performance, upgraded. Faster than the 970 EVO, the 970 EVO Plus is powered by the latest V-NAND technology and firmware optimisation. It maximises the potential of NVMe bandwidth for unbeatable computing in capacities up to 2TB, with reliability of up to 1,200 TBW.
Level Up Performance
The 970 EVO Plus reaches sequential read/write speeds up to 3,500/3,300 MB/s, up to 53%‡ faster than the 970 EVO. The latest V-NAND—which brings greater NAND performance and higher power efficiency—along with optimised firmware, a proven Phoenix controller and Intelligent TurboWrite boost.
Design Flexibility
The next advancement in NVMe SSD. The 970 EVO Plus fits up to 2TB onto the compact M.2 (2280) form factor, greatly expanding storage capacity and saving space for other components. Samsung’s innovative technology empowers you with the capacity to do more and accomplish more.
Unparalleled Reliability
Achieve a new level of drive confidence. Samsung’s advanced nickel-coated controller and heat spreader on the 970 EVO Plus enable superior heat dissipation. The Dynamic Thermal Guard automatically monitors and maintains optimal operating temperatures to minimise performance drops.
Samsung Magician
Advanced drive management made simple. The Samsung Magician software will help you keep an eye on your drive. A suite of user-friendly tools helps keep your drive up to date, monitor drive health, check speed and even boost performance.
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Specifications
| Type | M.2 2280 PCIe (NVMe) |
| Capacity | 1 TB |
| Max Writing | 3300 MB/s MB/s |
| Max reading | 3500 MB/s |
| Memory | 3D V-NAND |
| Extra functions | AES 256-bits encryption, TurboWrite technology |
| Warranty | 5 year |
| EAN Code | 8801643628086 |
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| Features | |
|---|---|
| SSD form factor | M.2 |
| SSD capacity | 1000 GB |
| Interface | PCI Express 3.0 |
| Memory type | V-NAND MLC |
| NVMe | Yes |
| Component for | PC |
| Hardware encryption | Yes |
| Read speed | 3500 MB/s |
| Write speed | 3300 MB/s |
| NVMe version | 1.3 |
| Security algorithms | 256-bit AES |
| Random read (4KB) | 600000 IOPS |
| Random write (4KB) | 550000 IOPS |
| Controller type | Samsung Phoenix |
| PCI Express interface data lanes | x4 |
| DevSlp (device sleep) support | Yes |
| S.M.A.R.T. support | Yes |
| Features | |
| TRIM support | Yes |
| Mean time between failures (MTBF) | 1500000 h |
| Power | |
| Operating voltage | 3.3 V |
| Power consumption (max) | 9 W |
| Power consumption (average) | 6 W |
| Power consumption (idle) | 0.003 W |
| Operational conditions | |
| Operating temperature (T-T) | 0 - 70 C |
| Weight & dimensions | |
| Width | 80.2 mm |
| Depth | 2.38 mm |
| Height | 22.1 mm |
| Weight | 8 g |
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